| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| D2587P275 | Wavelength-selected, high-power with locker isolated DFB laser module. ITU-T frequency 192.75 THz. Center wavelength 1555.34 nm. High optical power 20 mW, CW | distributor | Metal/ceramic butter | 14 | -25°C | 70°C | 122 K |
| IRFP27N60K | HEXFET power MOSFET. VDSS = 600 V, RDS(on) = 180 mOhm, ID = 27 A | International-Rectifier | - | 3 | -55°C | 150°C | 91 K |
| MA4P274-1225 | 5-3000 MHz, quad PIN diode attenuator | M-A-COM---manufacturer-of-RF | SOT | 5 | -65°C | 125°C | 209 K |
| MA4P274-1225T | 5-3000 MHz, quad PIN diode attenuator | M-A-COM---manufacturer-of-RF | SOT | 5 | -65°C | 125°C | 209 K |
| MA4P274-287T | 100 V, Surface mount plastic PIN diode | M-A-COM---manufacturer-of-RF | SOT | 3 | -65°C | 150°C | 210 K |
| MA4P275-287T | 75 V, Surface mount plastic PIN diode | M-A-COM---manufacturer-of-RF | SOT | 3 | -65°C | 150°C | 210 K |
| MA4P277-287T | 200 V, Surface mount plastic PIN diode | M-A-COM---manufacturer-of-RF | SOT | 3 | -65°C | 150°C | 210 K |
| MA4P278-287T | 200 V, Surface mount plastic PIN diode | M-A-COM---manufacturer-of-RF | SOT | 3 | -65°C | 150°C | 210 K |
| OP27BJ | Low-noise precision operational amplifier. 8MHz gain-bandwidth product. 2.8V/micros slew rate | Maxim-Integrated-Producs | - | 8 | -55°C | 125°C | 446 K |
| OP27CJ | Low-noise precision operational amplifier. 8MHz gain-bandwidth product. 2.8V/micros slew rate | Maxim-Integrated-Producs | - | 8 | -55°C | 125°C | 446 K |
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