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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
5KP30A30V, 103A glass passivated transient voltage suppressordistributor-2-55°C150°C60 K
5KP30C30V, 93A glass passivated transient voltage suppressordistributor-2-55°C150°C60 K
5KP30CA30V, 103A glass passivated transient voltage suppressordistributor-2-55°C150°C60 K
BYP30-600Fast recovery diode. Inverse diode for power transistors, invertor, UPS, snubber and clamping diode. Ifav = 30A, Vrrm = 600V.distributor-2-40°C150°C46 K
P3055LD25V; 12A N-channel logic level enhancement mode field effect transistordistributorSOP3-55°C150°C214 K
P3055LL25V; 6A N-channel logic level enhancement mode field effect transistordistributor-3-55°C150°C217 K
TC55RP3001EZBLow dropout positive voltage regulator. Output voltage 3.0V. Tolerance +-1%.TelCom-Semiconductor-Inc--3-40°C85°C50 K
TC55RP3002EMBLow dropout positive voltage rgulator. Output voltage 3.0V. Tolerance +-2%.TelCom-Semiconductor-Inc--3-40°C85°C50 K
TC55RP3002EZBLow dropout positive voltage regulator. Output voltage 3.0V. Tolerance +-2%.TelCom-Semiconductor-Inc--3-40°C85°C50 K
TIP3055NPN, silicon power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 7Vcd, Ic = 15Adc, PD = 90W.distributor-3-65°C150°C47 K
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