| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| D2587P325 | Wavelength-selected, high-power with locker isolated DFB laser module. ITU-T frequency 193.25 THz. Center wavelength 1551.58 nm. High optical power 20 mW, CW | distributor | Metal/ceramic butter | 14 | -25°C | 70°C | 122 K |
| KS57P3204 | Single-chip CMOS microcontroller, OTP version | Samsung-Electronic | QFP | 64 | -40°C | 85°C | 306 K |
| TIP32A | 60 V, PNP plastic power transistor | distributor | - | 3 | -65°C | 150°C | 25 K |
| TIP32A | 60V 3A complementary silicon plastic power transistor | distributor | - | 4 | -65°C | 150°C | 192 K |
| TIP32B | 80V 3A complementary silicon plastic power transistor | distributor | - | 4 | -65°C | 150°C | 192 K |
| TIP32C | 100V 3A complementary silicon plastic power transistor | distributor | - | 4 | -65°C | 150°C | 192 K |
| TIP32C | Silicon epitaxial planar transistor. Collector-emitter voltage peak value 100V. Collector-emitter voltage(open base) 100V. Emitter-base voltage(open collector) 5V | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 61 K |
| TIP32D | 120V 3A complementary silicon high-power transistor | distributor | - | 4 | -65°C | 150°C | 200 K |
| TIP32E | 140V 3A complementary silicon high-power transistor | distributor | - | 4 | -65°C | 150°C | 200 K |
| TIP32F | 160V 3A complementary silicon high-power transistor | distributor | - | 4 | -65°C | 150°C | 200 K |
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