| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BSP324 | N-channel SIPMOS small-signal transistor | Infineon-formely-Siemens | - | 4 | -55°C | 150°C | 176 K |
| TISP3240F3D | Dual Symmetrical Overvoltage TISP for 3 Wire Ground Backed Ringer Protection | Power-Innovations | D | - | - | - | 457 K |
| TISP3240F3DR | Dual Symmetrical Overvoltage TISP for 3 Wire Ground Backed Ringer Protection | Power-Innovations | DR | - | - | - | 457 K |
| TISP3240F3SL | Dual Symmetrical Overvoltage TISP for 3 Wire Ground Backed Ringer Protection | Power-Innovations | SL | - | - | - | 457 K |
| TISP3260F3D | Dual Symmetrical Overvoltage TISP for 3 Wire Ground Backed Ringer Protection | Power-Innovations | D | - | - | - | 457 K |
| TISP3260F3DR | Dual Symmetrical Overvoltage TISP for 3 Wire Ground Backed Ringer Protection | Power-Innovations | DR | - | - | - | 457 K |
| TISP3260F3P | Dual Symmetrical Overvoltage TISP for 3 Wire Ground Backed Ringer Protection | Power-Innovations | P | - | - | - | 457 K |
| TISP3260F3SL | Dual Symmetrical Overvoltage TISP for 3 Wire Ground Backed Ringer Protection | Power-Innovations | SL | - | - | - | 457 K |
| TISP3290F3D | Dual Symmetrical Overvoltage TISP for 3 Wire Ground Backed Ringer Protection | Power-Innovations | D | - | - | - | 457 K |
| TISP3290F3DR | Dual Symmetrical Overvoltage TISP for 3 Wire Ground Backed Ringer Protection | Power-Innovations | DR | - | - | - | 457 K |
| << [3] [4] [5] [6] [7] 8 [9] [10] [11] [12] [13] >> |
|---|
