| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 5KP33A | GPP transient voltage suppressor(TVS) . 5000W peak power, 5.0W steady state. VBR=36.7V(min), VBR=40.6V(max) @IT=5.0mA. For bidirectional use C or CA suffix. | distributor | - | 2 | -55°C | 175°C | 970 K |
| D2587P335 | Wavelength-selected, high-power with locker isolated DFB laser module. ITU-T frequency 193.35 THz. Center wavelength 1550.52 nm. High optical power 20 mW, CW | distributor | Metal/ceramic butter | 14 | -25°C | 70°C | 122 K |
| TIP33A | 60V 10A complementary silicon high-power transistor | distributor | - | 3 | -65°C | 150°C | 144 K |
| TIP33B | 80V 10A complementary silicon high-power transistor | distributor | - | 3 | -65°C | 150°C | 144 K |
| TIP33C | 100V 10A complementary silicon high-power transistor | distributor | - | 3 | -65°C | 150°C | 144 K |
| TIP33D | 120V 10A complementary silicon high-power transistor | distributor | - | 3 | -65°C | 150°C | 144 K |
| TIP33E | 140V 10A complementary silicon high-power transistor | distributor | - | 3 | -65°C | 150°C | 144 K |
| TIP33F | 160V 10A complementary silicon high-power transistor | distributor | - | 3 | -65°C | 150°C | 144 K |
| ZVP3306A | P-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | - | 3 | -55°C | 150°C | 81 K |
| ZVP3306A | P-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | - | 3 | -55°C | 150°C | 81 K |
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