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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
GP350MHB06S900V half bridge IGBT moduledistributor-11--126 K
IRFP350HEXFET power MOSFET. VDSS = 400 V, RDS(on) = 0.30 Ohm, ID = 16 AInternational-Rectifier-3-55°C150°C161 K
IRFP354HEXFET power MOSFET. VDSS = 450 V, RDS(on) = 0.35 Ohm, ID = 14 AInternational-Rectifier-3-55°C150°C204 K
MP35-0050V three phase bridge rectifierdistributor-5-65°C125°C70 K
MP3510Single-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 1000V, max RMS bridge input voltage 700V, max DC blocking voltage 1000V. Max average forward output current 35.0A at Tc=55degC.distributor-4-55°C175°C29 K
MP3510Single-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 1000V, max RMS bridge input voltage 700V, max DC blocking voltage 1000V. Max average forward output current 35.0A at Tc=55degC.distributor-4-55°C175°C29 K
MP356Single-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 600V, max RMS bridge input voltage 420V, max DC blocking voltage 600V. Max average forward output current 35.0A at Tc=55degC.distributor-4-55°C175°C29 K
MP356Single-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 600V, max RMS bridge input voltage 420V, max DC blocking voltage 600V. Max average forward output current 35.0A at Tc=55degC.distributor-4-55°C175°C29 K
MP358Single-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 800V, max RMS bridge input voltage 560V, max DC blocking voltage 800V. Max average forward output current 35.0A at Tc=55degC.distributor-4-55°C175°C29 K
MP358Single-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 800V, max RMS bridge input voltage 560V, max DC blocking voltage 800V. Max average forward output current 35.0A at Tc=55degC.distributor-4-55°C175°C29 K
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