| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CP3508 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 800V. Max average forward current for resistive load at Tc=55degC 35A. | distributor | - | 4 | -55°C | 150°C | 68 K |
| TC55RP3501ECB | Low dropout positive voltage rgulator. Output voltage 3.5V. Tolerance +-1%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC55RP3501EMB | Low dropout positive voltage rgulator. Output voltage 3.5V. Tolerance +-1%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC55RP3501EZB | Low dropout positive voltage regulator. Output voltage 3.5V. Tolerance +-1%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC55RP3502ECB | Low dropout positive voltage rgulator. Output voltage 3.5V . Tolerance +-2%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC55RP3502EMB | Low dropout positive voltage rgulator. Output voltage 3.5V. Tolerance +-2%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC55RP3502EZB | Low dropout positive voltage regulator. Output voltage 3.5V. Tolerance +-2%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TIP35A | NPN, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. | distributor | - | 3 | -65°C | 150°C | 47 K |
| TIP35B | NPN, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. | distributor | - | 3 | -65°C | 150°C | 47 K |
| TIP35C | NPN, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. | distributor | - | 3 | -65°C | 150°C | 47 K |
| << [10] [11] [12] [13] [14] 15 [16] [17] [18] [19] [20] >> |
|---|
