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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BSP3505DBaseband sound processorMicronas-IntermetallPLCC680°C65°C267 K
BSP3505DBaseband sound processorMicronas-IntermetallPDIP640°C65°C267 K
BSP3505DBaseband sound processorMicronas-IntermetallPDIP520°C65°C267 K
BSP3505DBaseband sound processorMicronas-IntermetallPQFP800°C65°C267 K
BSP3505DBaseband sound processorMicronas-IntermetallPQFP440°C65°C267 K
BSP3505D-A2Baseband sound processorMicronas-IntermetallPSDIP520°C70°C222 K
BSP3505D-A2Baseband sound processorMicronas-IntermetallPQFP800°C70°C222 K
IRFP350HEXFET power MOSFET. VDSS = 400 V, RDS(on) = 0.30 Ohm, ID = 16 AInternational-Rectifier-3-55°C150°C161 K
MP3505Single-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 50V, max RMS bridge input voltage 35V, max DC blocking voltage 50V. Max average forward output current 35.0A at Tc=55degC.distributor-4-55°C175°C29 K
MP3505Single-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 50V, max RMS bridge input voltage 35V, max DC blocking voltage 50V. Max average forward output current 35.0A at Tc=55degC.distributor-4-55°C175°C29 K
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