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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
15KP36AGlass passivated junction transient voltage suppressor. Vrwm = 36 V. Vbr(min/max) = 40.0/46.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 58.1 V @ Ipp = 251 A.distributor-2-50°C175°C63 K
15KP36CAGlass passivated junction transient voltage suppressor. Vrwm = 36 V. Vbr(min/max) = 40.0/46.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 58.1 V @ Ipp = 251 A.distributor-2-50°C175°C63 K
TC55RP3601ECBLow dropout positive voltage rgulator. Output voltage 3.6V. Tolerance +-1%.TelCom-Semiconductor-Inc--3-40°C85°C50 K
TC55RP3601EMBLow dropout positive voltage rgulator. Output voltage 3.6V. Tolerance +-1%.TelCom-Semiconductor-Inc--3-40°C85°C50 K
TC55RP3601EZBLow dropout positive voltage regulator. Output voltage 3.6V. Tolerance +-1%.TelCom-Semiconductor-Inc--3-40°C85°C50 K
TC55RP3602ECBLow dropout positive voltage rgulator. Output voltage 3.6V . Tolerance +-2%.TelCom-Semiconductor-Inc--3-40°C85°C50 K
TC55RP3602EMBLow dropout positive voltage rgulator. Output voltage 3.6V. Tolerance +-2%.TelCom-Semiconductor-Inc--3-40°C85°C50 K
TC55RP3602EZBLow dropout positive voltage regulator. Output voltage 3.6V. Tolerance +-2%.TelCom-Semiconductor-Inc--3-40°C85°C50 K
TIP36APNP, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W.distributor-3-65°C150°C47 K
TIP36BPNP, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W.distributor-3-65°C150°C47 K
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