| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTP3N60A4 | 600V, SMPS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 156 K |
| HGTP3N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 130 K |
| HGTP3N60B3 | 7A, 600V, UFS Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 141 K |
| HGTP3N60B3D | 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 154 K |
| IXFP3N80 | 800V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 93 K |
| MTP3N100E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 206 K |
| MTP3N120E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 252 K |
| MTP3N25E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 208 K |
| MTP3N50E | TMOS E-FET high energy power FET | Motorola | - | 4 | -65°C | 150°C | 251 K |
| MTP3N60E | TMOS E-FET high energy power FET | Motorola | - | 4 | -55°C | 150°C | 183 K |
| [1] [2] [3] 4 [5] [6] [7] [8] [9] |
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