| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTP3N60C3D | TRANSISTOR IGBT TO-220 | Fairchild-Semiconductor | - | - | - | - | 327 K |
| IXTP3N110 | 1200V high volatge power MOSFET | distributor | - | 3 | -55°C | 150°C | 102 K |
| IXTP3N120 | 1200V high volatge power MOSFET | distributor | - | 3 | -55°C | 150°C | 102 K |
| PHP3N20E | 200 V, power MOS transistor | Philips-Semiconductors | TO | 3 | -55°C | 175°C | 52 K |
| PHP3N20L | 200 V, power MOS transistor logic level FET | Philips-Semiconductors | TO | 3 | -55°C | 175°C | 53 K |
| PHP3N20L | 200 V, power MOS transistor logic level FET | Philips-Semiconductors | TO | 3 | -55°C | 175°C | 53 K |
| PHP3N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 76 K |
| PHP3N50 | 500 V, power MOS transistor | Philips-Semiconductors | TO | 3 | -55°C | 150°C | 53 K |
| PHP3N50 | 500 V, power MOS transistor | Philips-Semiconductors | TO | 3 | -55°C | 150°C | 53 K |
| PHP3N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 78 K |
| [1] [2] [3] [4] 5 [6] [7] [8] [9] |
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