Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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FQP3N25 | 250V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 612 K |
FQP3N30 | 300V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 708 K |
FQP3N30 | 300V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 708 K |
FQP3N40 | 400V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 716 K |
FQP3N60 | 600V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 569 K |
FQP3N80 | 800V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 652 K |
FQP3N90 | 900V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 688 K |
HGTP3N60A4 | 600V, SMPS Series N-Channel IGBT | Fairchild-Semiconductor | - | - | - | - | 189 K |
HGTP3N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Fairchild-Semiconductor | - | - | - | - | 113 K |
PHP3N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 79 K |
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