| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRGP430UD2 | Insulated gate bipolar transistor with ultrafast soft recovery diode | International-Rectifier | - | 3 | -55°C | 150°C | 426 K |
| KS57P4304 | Single-chip CMOS microcontroller. OTP version | Samsung-Electronic | QFP | 44 | -40°C | 85°C | 233 K |
| KS57P4304 | Single-chip CMOS microcontroller. OTP version | Samsung-Electronic | SDIP | 42 | -40°C | 85°C | 233 K |
| KS86P4304 | 8-bit single-chip CMOS microcontroller. OTP version | Samsung-Electronic | - | 20 | -40°C | 85°C | 208 K |
| KS86P4304 | 8-bit single-chip CMOS microcontroller. OTP version | Samsung-Electronic | - | 20 | -40°C | 85°C | 208 K |
| KS86P4304 | 8-bit single-chip CMOS microcontroller. OTP version | Samsung-Electronic | - | 18 | -40°C | 85°C | 208 K |
| KS86P4304 | 8-bit single-chip CMOS microcontroller. OTP version | Samsung-Electronic | - | 16 | -40°C | 85°C | 208 K |
| MA4P4300B | High power PIN diode | M-A-COM---manufacturer-of-RF | SMQ | 2 | -65°C | 175°C | 311 K |
| MA4P4301 | 100 V, High power PIN diode | M-A-COM---manufacturer-of-RF | SMQ | 2 | -65°C | 175°C | 311 K |
| MA4P4302 | 200 V, High power PIN diode | M-A-COM---manufacturer-of-RF | SMQ | 2 | -65°C | 175°C | 311 K |
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