| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 5KP45A | 50.0-55.3V transient voltage suppressor | distributor | - | 2 | -55°C | 175°C | 1 M |
| 5KP45A | GPP transient voltage suppressor(TVS) . 5000W peak power, 5.0W steady state. VBR=50.0V(min), VBR=55.3V(max) @IT=5.0mA. For bidirectional use C or CA suffix. | distributor | - | 2 | -55°C | 175°C | 970 K |
| D2587P455 | Wavelength-selected, high-power with locker isolated DFB laser module. ITU-T frequency 194.55 THz. Center wavelength 1540.95 nm. High optical power 20 mW, CW | distributor | Metal/ceramic butter | 14 | -25°C | 70°C | 122 K |
| IRFP450 | HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.40 Ohm, ID = 14 A | International-Rectifier | - | 3 | -55°C | 150°C | 169 K |
| IRFP450A | HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.40 Ohm, ID = 14 A | International-Rectifier | - | 3 | -55°C | 150°C | 101 K |
| IRFP450N | HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.37 Ohm, ID = 14 A | International-Rectifier | - | 3 | -55°C | 150°C | 121 K |
| KS88P4504 | 8-bit single-chip CMOS microcontroller.OTP version. | Samsung-Electronic | QFP | 80 | -40°C | 85°C | 293 K |
| KS88P4504 | 8-bit single-chip CMOS microcontroller.OTP version. | Samsung-Electronic | TQFP | 80 | -40°C | 85°C | 293 K |
| ZVP4525TA | 250 V, P-channel enhancement mode MOSFET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 406 K |
| ZVP4525TA | 250 V, P-channel enhancement mode MOSFET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 406 K |
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