| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| NDL7408P4KC | 1310 nm InGaAsP strained MQW DC-PBH laser diode | NEC-Electronics-Inc- | DIP | 8 | -40°C | 85°C | 358 K |
| NDL7408P4KD | 1310 nm InGaAsP strained MQW DC-PBH laser diode | NEC-Electronics-Inc- | DIP | 8 | -40°C | 85°C | 358 K |
| P4KE400 | 324.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 844 K |
| P4KE400A | 342.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 844 K |
| P4KE440 | 356.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 844 K |
| P4KE440 | 356.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 844 K |
| P4KE440A | 376.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 844 K |
| P4KE6.8 | 6.8 V, 400 W, glass passivated junction transient voltage suppressor | distributor | - | 2 | -65°C | 175°C | 254 K |
| P4KE6.8A | 6.8 V, 400 W, glass passivated junction transient voltage suppressor | distributor | - | 2 | -65°C | 175°C | 254 K |
| P4KE6.8CA | 6.8 V, 400 W, glass passivated junction transient voltage suppressor | distributor | - | 2 | -65°C | 175°C | 254 K |
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