| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IXFP4N100Q | 1000V HiPerFET power MOSFET Q-class | distributor | - | 3 | -55°C | 150°C | 76 K |
| IXGP4N100 | 1000V IGBT | distributor | - | 3 | -55°C | 150°C | 106 K |
| KP4N12 | Transient surge suppressors | Shindengen-Electric-Manufacturing-Company-Ltd- | 2F | - | - | - | 261 K |
| MGP4N80E | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 124 K |
| MTP4N40E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 239 K |
| MTP4N50E | TMOS E-FET high energy power FET | Motorola | - | 4 | -55°C | 150°C | 254 K |
| MTP4N80E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 159 K |
| RFP4N05 | 4A, 50V and 60V, 0.800 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 40 K |
| RFP4N06 | 4A, 50V and 60V, 0.800 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 40 K |
| STP4NA90 | Power dissipation 100 W Transistor polarity N Channel Current Id cont. 3.5 A Current Idm pulse 14 A Voltage Vgs th max. 3.75 V Voltage Vds max 900 V Resistance Rds on 4 R Temperature power 25 ?C | SGS-Thomson-Microelectronics | - | - | - | - | 236 K |
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