| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 6MBP50NA060-01 | IGBT-IRM | distributor | - | 22 | -20°C | 100°C | 3 M |
| 7MBP50NA060-01 | IGBT-IPM | distributor | - | 22 | - | - | 4 M |
| MTP50N06EL | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 232 K |
| MTP50N06V | TMOS V power field effect transistor | Motorola | - | 4 | -55°C | 175°C | 179 K |
| MTP50N06VL | TMOS V power field effect transistor | Motorola | - | 4 | -55°C | 175°C | 195 K |
| P50N02LS | 25V; 55A N-channel logic level enhancement mode field effect transistor | distributor | - | 3 | -55°C | 150°C | 45 K |
| RFP50N05 | 50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 47 K |
| RFP50N06 | 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 74 K |
| RFP50N06 | 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 74 K |
| RFP50N06LE | 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 412 K |
| [1] 2 [3] [4] [5] |
|---|
