| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTP50N06EL | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 232 K |
| MTP50N06V | TMOS V power field effect transistor | Motorola | - | 4 | -55°C | 175°C | 179 K |
| MTP50N06VL | TMOS V power field effect transistor | Motorola | - | 4 | -55°C | 175°C | 195 K |
| RFP50N06 | 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 74 K |
| RFP50N06 | 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 74 K |
| RFP50N06LE | 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 412 K |
| STP50N06 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 201 K |
| STP50N06FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 201 K |
| STP50N06L | N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 199 K |
| STP50N06LFI | N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 199 K |
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