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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
CEP6060LRN-channel logic level enhancement mode field effect transistorChino-Excel-Technology-Corporation-3-65°C175°C534 K
CEP6060RN-channel logic level enhancement mode field effect transistorChino-Excel-Technology-Corporation-3-65°C175°C527 K
ESP60-03S60 Watt, output voltage 3V (12A), switching power supplierdistributorSO--10°C60°C329 K
P600ASilicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 50V. Maximum RMS voltage 35V. Maximum DC blocking voltage 50VWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-2-65°C175°C344 K
P600BSilicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 100V. Maximum RMS voltage 70V. Maximum DC blocking voltage 100VWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-2-65°C175°C344 K
P600DSilicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 200V. Maximum RMS voltage 140V. Maximum DC blocking voltage 200VWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-2-65°C175°C344 K
P600GSilicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 400V. Maximum RMS voltage 280V. Maximum DC blocking voltage 400VWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-2-65°C175°C344 K
P600JSilicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 600V. Maximum RMS voltage 420V. Maximum DC blocking voltage 600VWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-2-65°C175°C344 K
P600KSilicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 800V. Maximum RMS voltage 560V. Maximum DC blocking voltage 800VWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-2-65°C175°C344 K
P600MSilicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 1000V. Maximum RMS voltage 700V. Maximum DC blocking voltage 1000VWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-2-65°C175°C344 K
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