| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 5KP60A | GPP transient voltage suppressor(TVS) . 5000W peak power, 5.0W steady state. VBR=66.7V(min), VBR=73.7V(max) @IT=5.0mA. For bidirectional use C or CA suffix. | distributor | - | 2 | -55°C | 175°C | 970 K |
| GP60A | 50 V, 6 A sintered glass passivated junction rectifier | distributor | - | 2 | -65°C | 175°C | 58 K |
| GP60A | 50 V, 6 A sintered glass passivated junction rectifier | distributor | - | 2 | -65°C | 175°C | 58 K |
| GP60B | 100 V, 6 A sintered glass passivated junction rectifier | distributor | - | 2 | -65°C | 175°C | 58 K |
| GP60B | 100 V, 6 A sintered glass passivated junction rectifier | distributor | - | 2 | -65°C | 175°C | 58 K |
| MA4P604-131 | 1000 V, PIN diode chip | M-A-COM---manufacturer-of-RF | - | - | -65°C | 175°C | 506 K |
| MA4P606-131 | 1000 V, PIN diode chip | M-A-COM---manufacturer-of-RF | - | - | -65°C | 175°C | 506 K |
| MA4P607-210 | 1000 V, PIN diode chip | M-A-COM---manufacturer-of-RF | - | - | -65°C | 175°C | 506 K |
| MA4P608-130 | 1000 V, PIN diode chip | M-A-COM---manufacturer-of-RF | - | - | -65°C | 175°C | 506 K |
| OP600B | NPN silicon phototransistor | distributor | - | 2 | -65°C | 125°C | 271 K |
| OP600C | NPN silicon phototransistor | distributor | - | 2 | -65°C | 125°C | 271 K |
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