| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FDP6644S | 30V N-Channel PowerTrench SyncFET TM | Fairchild-Semiconductor | - | - | - | - | 160 K |
| FDP6676 | 30V N-Channel Logic Level PowerTrench MOSFET | Fairchild-Semiconductor | - | - | - | - | 82 K |
| FDP6676S | 30V N-Channel PowerTrench SyncFET TM | Fairchild-Semiconductor | - | - | - | - | 116 K |
| FDP6690S | 30V N-Channel PowerTrench SyncFET TM | Fairchild-Semiconductor | - | - | - | - | 88 K |
| P6606-110 | Active area: 1x1mm; 0.2mW; InSb photoconductive detector: thermoelectrically cooled detector capable of long-term measurements | distributor | - | 6 | -40°C | 60°C | 155 K |
| P6606-210 | Active area: 1x1mm; 0.2mW; InSb photoconductive detector: thermoelectrically cooled detector capable of long-term measurements | distributor | - | 6 | -40°C | 60°C | 155 K |
| P6606-305 | Active area: 0.5x0.5mm; 0.2mW; InSb photoconductive detector: thermoelectrically cooled detector capable of long-term measurements | distributor | - | 6 | -40°C | 60°C | 155 K |
| P6606-310 | Active area: 1x1mm; 0.2mW; InSb photoconductive detector: thermoelectrically cooled detector capable of long-term measurements | distributor | - | 6 | -40°C | 60°C | 155 K |
| P6606-320 | Active area: 2x2mm; 0.2mW; InSb photoconductive detector: thermoelectrically cooled detector capable of long-term measurements | distributor | - | 6 | -40°C | 60°C | 155 K |
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