| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FQP6N15 | 150V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 748 K |
| MI-P6NX-XXX | InputV:270V; outputV:18.5V; 100-200W; 20-..A; dual output DC-DC converter provide power system designers with cost-effective, high performance, off-the-shelf solutions | distributor | Chassis mount packag | - | - | - | 134 K |
| MTP6N60E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 156 K |
| PHP6N10E | 100 V, power MOS transistor | Philips-Semiconductors | TO | 3 | - | - | 53 K |
| PHP6N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 77 K |
| PHP6N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 77 K |
| PHP6N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 74 K |
| PHP6ND50E | 500 V, power MOS transistor FREDFET, avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 64 K |
| RFP6N50 | 6.0A, 450V, 1.250 ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 32 K |
| STP6N50 | Power dissipation 100 W Transistor polarity N Channel Current Id cont. 6 A Current Idm pulse 24 A Pitch lead 2.54 mm Voltage Vds max 500 V Resistance Rds on 1.1 R Temperature current 25 ?C | SGS-Thomson-Microelectronics | - | - | - | - | 201 K |
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