| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MGP7N60E | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 118 K |
| MGP7N60ED | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 144 K |
| STP7NA40 | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 201 K |
| STP7NA40FI | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 201 K |
| STP7NB30 | N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 108 K |
| STP7NB30FP | N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 108 K |
| STP7NE10 | N-CHANNEL 100V - 0.3 OHM - 7A - TO-220 STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 50 K |
| STP7NE10L | N-CHANNEL 100V - 0.3 OHM - 7A - TO-220 STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 50 K |
| VNP7N04 | OMNIFET FULLY AUTOPROTECTED POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 133 K |
| VNP7N04FI | OMNIFET FULLY AUTOPROTECTED POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 146 K |
| 1 [2] [3] [4] [5] [6] [7] |
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