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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
HGTP7N60A4600V, SMPS Series N-Channel IGBTIntersil-Corporation----168 K
HGTP7N60A4D600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast DiodeIntersil-Corporation----134 K
HGTP7N60B314A, 600V, UFS Series N-Channel IGBTsIntersil-Corporation----92 K
HGTP7N60B3D14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast DiodeIntersil-Corporation----94 K
HGTP7N60C3D14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast DiodesIntersil-Corporation----176 K
MGP7N80EInsulated gate bipolar transistorMotorola-3-55°C150°C122 K
RFP7N357A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETsIntersil-Corporation----47 K
RFP7N407A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETsIntersil-Corporation----47 K
STP7NB80N-CHANNEL 800V - 1.2 OHM - 6.5A - TO-220/TO-220FP POWERMESHSGS-Thomson-Microelectronics----106 K
STP7NB80FPN-CHANNEL 800V - 1.2 OHM - 6.5A - TO-220/TO-220FP POWERMESHSGS-Thomson-Microelectronics----106 K
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