Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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ISP847 | 7V high density mounting phototransistor optically coupled isolator | distributor | - | 16 | -55°C | 100°C | 90 K |
ISP847-1 | 6V; 70mA phototransistor optically coupled isolator | distributor | - | 16 | -55°C | 100°C | 61 K |
ISP847-2 | 6V; 70mA phototransistor optically coupled isolator | distributor | - | 16 | -55°C | 100°C | 61 K |
ISP847-3 | 6V; 70mA phototransistor optically coupled isolator | distributor | - | 16 | -55°C | 100°C | 61 K |
KS88P8432 | 8-bit single-chip CMOS microcontroller. OTP version. | Samsung-Electronic | SDIP | 42 | -20°C | 85°C | 168 K |
S3P8469 | 8-bit single-chip CMOS microcontroller.OTP version | Samsung-Electronic | SDIP | 64 | -40°C | 85°C | 228 K |
S3P8475 | 8-bit single-chip CMOS microcontroller. OTP version | Samsung-Electronic | SDIP | 42 | -40°C | 85°C | 165 K |
S3P8475 | 8-bit single-chip CMOS microcontroller. OTP version | Samsung-Electronic | QFP | 44 | -40°C | 85°C | 165 K |
S3P84A4 | 8-bit single-chip CMOS microcontroller. 784-byte intemal register file. 4-Kbyte internal program memory. OTP version. | Samsung-Electronic | QFP | 64 | -40°C | 85°C | 236 K |
VTP8440 | Process photodiode. Isc = 55 microA(typ), Voc = 350 mV at H = 100 fc, 2850 K. | distributor | Ceramic | 2 | -20°C | 75°C | 26 K |
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