| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| D2547P862 | Wavelength-selected, high-power without locker(L-band) isolated DFB laser module. ITU-T frequency 186.2 THz. Center wavelength 1610.06 nm. High optical power 20 mW, CW | distributor | Metal/ceramic butter | 14 | -25°C | 70°C | 122 K |
| D2547P863 | Wavelength-selected, high-power without locker(L-band) isolated DFB laser module. ITU-T frequency 186.3 THz. Center wavelength 1609.19 nm. High optical power 20 mW, CW | distributor | Metal/ceramic butter | 14 | -25°C | 70°C | 122 K |
| EM78P860 | 8-BIT micro-controller | ELAN-Microelectronics-Corp- | QFP | 100 | 0°C | 70°C | 191 K |
| EM78P862A | 8-BIT micro-controller | ELAN-Microelectronics-Corp- | QFP | 100 | 0°C | 70°C | 393 K |
| RHRP860 | 8A, 400V - 600V Hyperfast Diodes | Fairchild-Semiconductor | - | - | - | - | 365 K |
| RURP860 | 8A, 400V - 600V Ultrafast Diodes | Fairchild-Semiconductor | - | - | - | - | 77 K |
| VTP8651 | Process photodiode. Isc = 55 microA(typ), Voc = 300 mV at H = 100 fc, 2850 K. | distributor | Mini DIP | 2 | -40°C | 85°C | 26 K |
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