| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRFPC50 | HEXFET power MOSFET. VDSS = 600 V, RDS(on) = 0.60 Ohm, ID = 11 A | International-Rectifier | - | 3 | -55°C | 150°C | 164 K |
| IRFPC50A | HEXFET power MOSFET. VDSS = 600 V, RDS(on) = 0.58 Ohm, ID = 11 A | International-Rectifier | - | 3 | -55°C | 150°C | 95 K |
| IRG4PC50 | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.45V @ VGE = 15V, IC = 39A | International-Rectifier | - | 3 | -55°C | 150°C | 146 K |
| IRG4PC50K | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.84V @ VGE = 15V, IC = 30A | International-Rectifier | - | 3 | -55°C | 150°C | 115 K |
| IRG4PC50S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.28V @ VGE = 15V, IC = 41A | International-Rectifier | - | 3 | -55°C | 150°C | 164 K |
| IRG4PC50U | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.65V @ VGE = 15V, IC = 27A | International-Rectifier | - | 3 | -55°C | 150°C | 147 K |
| IRG4PC50UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.65V @ VGE = 15V, IC = 27A | International-Rectifier | - | 3 | -55°C | 150°C | 213 K |
| IRG4PC50W | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.3V @ VGE = 15V, IC = 27A | International-Rectifier | - | 3 | -55°C | 150°C | 157 K |
| PC50F2 | 200 V, 50 A, diode | distributor | - | 3 | -40°C | 150°C | 29 K |
| PC50F4 | 400 V, 50 A, diode | distributor | - | 3 | -40°C | 150°C | 29 K |
| [1] [2] 3 [4] [5] [6] [7] [8] [9] [10] |
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