| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRG4PH20K | Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 3.17V @ VGE = 15V, IC = 5.0A | International-Rectifier | - | 3 | -55°C | 150°C | 229 K |
| IRG4PH20KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.17V @ VGE = 15V, IC = 5.0A | International-Rectifier | - | 3 | -55°C | 150°C | 276 K |
| MA4PH235 | Surface mount plastic PIN diode | M-A-COM---manufacturer-of-RF | SMQ | - | -65°C | 150°C | 210 K |
| MA4PH236 | Surface mount plastic PIN diode | M-A-COM---manufacturer-of-RF | SMQ | - | -65°C | 150°C | 210 K |
| MA4PH238 | Surface mount plastic PIN diode | M-A-COM---manufacturer-of-RF | SMQ | - | -65°C | 150°C | 210 K |
| PH2729-150M | 2700-2900 MHz,150 Watt, radar pulsed power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 79 K |
| PH2856-160 | 2.856GHz, 160 W, linear accelerator pulsed power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 136 K |
| PH2931-135S | 2900-3100 MHz, 135 W,20 ms, radar pulsed power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 150 K |
| PH2931-20M | 2900-3100 MHz, 20 W,100 ms, radar pulsed power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 161 K |
| PH2931-5M | 2900-3100 MHz, 5 W,100 ms, radar pulsed power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 163 K |
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