| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CPH5501 | PNP Epitaxial Planar Silicon Transistor DC/DC Converter Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 58 K |
| CPH5503 | NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 31 K |
| CPH5504 | NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 29 K |
| CPH5505 | PNP Epitaxial Planar Silicon Transistor PNP Epitaxial Planar Silicon Transistor | SANYO-Electric-Co--Ltd- | - | - | - | - | 41 K |
| CPH5601 | P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 42 K |
| CPH5602 | N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 42 K |
| CPH5603 | P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 42 K |
| IRG4PH50UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.78V @ VGE = 15V, IC = 24A | International-Rectifier | - | 3 | -55°C | 150°C | 229 K |
| PH5416 | 350 V, PNP high-voltage transistor | Philips-Semiconductors | - | 3 | -65°C | 150°C | 50 K |
| PH5416 | 350 V, PNP high-voltage transistor | Philips-Semiconductors | - | 3 | -65°C | 150°C | 50 K |
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