| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MH16S72PHB-6 | 1207959552-bit synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 573 K |
| MH32S64PHB-10 | 214683648-bit synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 593 K |
| MH32S64PHB-6 | 2147483648-bit synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 579 K |
| MH32S72PHB-10 | 2415919104-bit synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 595 K |
| MH32S72PHB-6 | 2415919104-bit synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 582 K |
| MH32S72PHB-7 | 2415919104-bit synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 595 K |
| MH32S72PHB-8 | 2415919104-bit synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 595 K |
| PHB11N03LT | 30 V, N-channel trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 107 K |
| PHB125N06LT | 55 V, trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 56 K |
| PHB160N03T | 30 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 271 K |
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