| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PHB100N03LT | 25 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 331 K |
| PHB112N06T | 55 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 262 K |
| PHB2N50 | 500 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 59 K |
| PHB36N06E | 60 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 55 K |
| PHB36N06E | 60 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 55 K |
| PHB47NQ10T | 100 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 267 K |
| PHB50N06LT | 55 V, TrenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 55 K |
| PHB66NQ03LT | 25 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 301 K |
| PHB73N06T | 55 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 264 K |
| PHB78NQ03LT | 25 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 292 K |
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