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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
PHB10N40E400 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C90 K
PHB13N40E400 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C104 K
PHB2N60E600 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C76 K
PHB37N06LT55 V, trenchMOS transistor logic level FETPhilips-SemiconductorsSOT3-55°C175°C64 K
PHB45N03LT30 V, TrenchMOS transistor logic level FETPhilips-SemiconductorsSOT3-55°C175°C49 K
PHB50N03LT25 V, N-channel trenchMOS transistor logic level FETPhilips-SemiconductorsSOT3-55°C175°C111 K
PHB55N03LT25 V, N-channel trenchMOS transistor logic level FETPhilips-SemiconductorsSOT3-55°C175°C109 K
PHB69N03LT25 V, N-channel trenchMOS transistor logic level FETPhilips-SemiconductorsSOT3-55°C175°C111 K
PHB87N03LT25 V, N-channel trenchMOS transistor logic level FETPhilips-SemiconductorsSOT3-55°C175°C102 K
PHB87N03T30 V, TrenchMOS transistor standard level FETPhilips-SemiconductorsSOT3-55°C175°C53 K
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