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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MH16S64APHB-61,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C688 K
MH16S64APHB-71,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C688 K
MH16S64APHB-81,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C688 K
MH16S64PHB-71,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C589 K
MH16S64PHB-81,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C589 K
PHB130N03LTTrenchMOS transistor Logic level FETPhilips-SemiconductorsSOT404---51 K
PHB24N03LTTrenchMOS transistor Logic level FETPhilips-SemiconductorsSOT404---54 K
PHB37N06LTTrenchMOS transistor Logic level FETPhilips-SemiconductorsSOT404---79 K
PHB50N06LTTrenchMOS transistor Logic level FETPhilips-SemiconductorsSOT404---80 K
PHB60N06LTTrenchMOS transistor Logic level FETPhilips-SemiconductorsSOT404---71 K
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