Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MH32S64APHB-8 | 2,147,483,648-bit (33,554,432-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 699 K |
MH32S64APHB-8 | 2,147,483,648-bit (33,554,432-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 699 K |
MH32S64PHB-10 | 2,147,483,648-bit (33,554,432-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 593 K |
MH32S64PHB-7 | 2,147,483,648-bit (33,554,432-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 593 K |
MH32S64PHB-8 | 2,147,483,648-bit (33,554,432-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 593 K |
MH32S72APHB-6 | 2,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 703 K |
MH32S72APHB-7 | 2,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 703 K |
MH32S72APHB-8 | 2,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 703 K |
MH32S72APHB-8 | 2,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 703 K |
MH32S72PHB-7 | 2,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 595 K |
MH32S72PHB-8 | 2,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 595 K |
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