| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PHD10N10E | PowerMOS transistor | Philips-Semiconductors | SOT428 | 3 | 0°C | 175°C | 76 K |
| PHD11N06LT | TrenchMOS transistor. Logic level FET. | Philips-Semiconductors | SOT428 | 3 | -55°C | 175°C | 76 K |
| PHD21N06LT | TrenchMOS transistor. Logic level FET. | Philips-Semiconductors | SOT428 | 3 | -55°C | 175°C | 82 K |
| PHD2N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT428 | 3 | -55°C | 150°C | 93 K |
| PHD2N60E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT428 | 3 | -55°C | 150°C | 94 K |
| PHD37N06LT | TrenchMOS transistor. Logic level FET. | Philips-Semiconductors | SOT428 | 3 | -55°C | 175°C | 79 K |
| PHD3N40E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT428 | 3 | -55°C | 150°C | 94 K |
| PHD44N06LT | TrenchMOS transistor. Logic level FET. | Philips-Semiconductors | SOT428 | 3 | -55°C | 175°C | 81 K |
| PHD50N06LT | TrenchMOS transistor. Logic level FET. | Philips-Semiconductors | SOT428 | 3 | -55°C | 175°C | 80 K |
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