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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
PHD2N60E600 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C76 K
PHD3055L60 V, power MOS transistor logic level FETPhilips-SemiconductorsSOT3-55°C175°C55 K
PHD3N20E200 V, power MOS transistorPhilips-SemiconductorsSOT3--56 K
PHD3N20E200 V, power MOS transistorPhilips-SemiconductorsSOT3--56 K
PHD50N03LT25 V, N-channel trenchMOS transistor logic level FETPhilips-SemiconductorsSOT3-55°C175°C111 K
PHD50N03LT25 V, N-channel trenchMOS transistor logic level FETPhilips-SemiconductorsSOT3-55°C175°C111 K
PHD55N03LT25 V, N-channel trenchMOS transistor logic level FETPhilips-SemiconductorsSOT3-55°C175°C109 K
PHD5N20E200 V, power MOS transistorPhilips-SemiconductorsSOT3-55°C175°C55 K
PHD69N03LT25 V, N-channel trenchMOS transistor logic level FETPhilips-SemiconductorsSOT3-55°C175°C111 K
PHD6N10E100 V, power MOS transistorPhilips-SemiconductorsSOT3-55°C175°C57 K
PHD87N03LT25 V, N-channel trenchMOS transistor logic level FETPhilips-SemiconductorsSOT3-55°C175°C102 K
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