| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PHD10N10E | PowerMOS transistor | Philips-Semiconductors | SOT428 | - | - | - | 76 K |
| PHD10N10E | PowerMOS transistor | Philips-Semiconductors | SOT428 | 3 | 0°C | 175°C | 76 K |
| PHD11N03LT | N-channel TrenchMOS(TM) transistor Logic level FET | Philips-Semiconductors | SOT428 | - | - | - | 105 K |
| PHD11N03LT | 30 V, N-channel trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 107 K |
| PHD11N06LT | N-channel TrenchMOS(TM) transistor Logic level FET | Philips-Semiconductors | SOT428 | - | - | - | 112 K |
| PHD11N06LT | 55 V, N-channel trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 114 K |
| PHD12N10E | PowerMOS transistor | Philips-Semiconductors | SOT428 | - | - | - | 79 K |
| PHD12NQ15T | N-channel TrenchMOS transistor | Philips-Semiconductors | SOT428 | - | - | - | 111 K |
| PHD12NQ15T | 150 V, N-channel trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 114 K |
| PHD18NQ10T | 100 V, N-channel trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 121 K |
| 1 [2] |
|---|
