Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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PHN1013 | 30 V, tranchMOS transistor | Philips-Semiconductors | SO | 8 | -55°C | 150°C | 54 K |
PHN103 | 30 V, N-channel enhancement mode MOS transistor | Philips-Semiconductors | SOT | 8 | -65°C | 150°C | 83 K |
PHN103 | N-channel enhancement mode MOS transistor. | Philips-Semiconductors | - | 8 | -65°C | 150°C | 77 K |
PHN103 | N-channel enhancement mode MOS transistor. | Philips-Semiconductors | - | 8 | -65°C | 150°C | 77 K |
PHN103 | N-channel enhancement mode MOS transistor. | Philips-Semiconductors | SO | 8 | -65°C | 150°C | 77 K |
PHN110 | N-channel enhancement mode vertical MOS transistor. | Philips-Semiconductors | SO | 8 | -65°C | 150°C | 80 K |
PHN110 | N-channel enhancement mode vertical MOS transistor. | Philips-Semiconductors | - | 8 | -65°C | 150°C | 80 K |
PHN210 | 30 V, dual N-channel enhancement mode tranchMOS transistor | Philips-Semiconductors | SO | 8 | -65°C | 150°C | 87 K |
PHN70308 | 25 V, N-channel enhancement mode trenchMOS transistor array | Philips-Semiconductors | SSOP | 28 | -55°C | 150°C | 132 K |
PHN708 | 30 V, 7 N-channel FET array enhancement mode MOS transistor | Philips-Semiconductors | SSOP | 24 | -55°C | 150°C | 92 K |
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