| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 28LV256PI-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | distributor | PDIP | 28 | -40°C | 85°C | 41 K |
| 28LV64PI-3 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. | distributor | PDIP | 28 | -40°C | 85°C | 42 K |
| 28LV64PI-4 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. | distributor | PDIP | 28 | -40°C | 85°C | 42 K |
| 28LV64PI-5 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. | distributor | PDIP | 28 | -40°C | 85°C | 42 K |
| 28LV64PI-6 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. | distributor | PDIP | 28 | -40°C | 85°C | 42 K |
| 29C010PI-1 | High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 120 ns. | distributor | PDIP | 32 | -40°C | 85°C | 52 K |
| 29C010PI-2 | High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns. | distributor | PDIP | 32 | -40°C | 85°C | 52 K |
| 29C010PI-3 | High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 200 ns. | distributor | PDIP | 32 | -40°C | 85°C | 52 K |
| 29C021PI-1 | High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. | distributor | PDIP | 32 | -40°C | 85°C | 54 K |
| 29C021PI-2 | High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 200 ns. | distributor | PDIP | 32 | -40°C | 85°C | 54 K |
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