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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
ispLSI1016EA-100LJ44In-system programmable high density PLD, 100 MHz, 10ns, low powerLattice-Semiconductor-CorporationPLCC440°C70°C162 K
ispLSI1016EA-100LT44In-system programmable high density PLD, 100 MHz, 10ns, low powerLattice-Semiconductor-CorporationTQFP440°C70°C162 K
ISPLSI8600V-125LB272125 MHz 3.3V in-system prommable superBIG high density PLDLattice-Semiconductor-CorporationBGA272-55°C125°C333 K
ISPLSI8600V-125LB492125 MHz 3.3V in-system prommable superBIG high density PLDLattice-Semiconductor-CorporationBGA492-55°C125°C333 K
ISPLSI8600V-60LB27260 MHz 3.3V in-system prommable superBIG high density PLDLattice-Semiconductor-CorporationBGA272-55°C125°C333 K
ISPLSI8600V-60LB49260 MHz 3.3V in-system prommable superBIG high density PLDLattice-Semiconductor-CorporationBGA492-55°C125°C333 K
ISPLSI8600V-90LB27290 MHz 3.3V in-system prommable superBIG high density PLDLattice-Semiconductor-CorporationBGA272-55°C125°C333 K
ISPLSI8600V-90LB492125 MHz 3.3V in-system prommable superBIG high density PLDLattice-Semiconductor-CorporationBGA492-55°C125°C333 K
ISPLSI8840-110LB432110 MHz 3.3V in-system prommable superBIG high density PLDLattice-Semiconductor-CorporationBGA432-55°C125°C304 K
ISPLSI8840-60LB43260 MHz 3.3V in-system prommable superBIG high density PLDLattice-Semiconductor-CorporationBGA432-55°C125°C304 K
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