| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ispLSI1032E-100LT | In-system programmable high density PLD, 10ns | Lattice-Semiconductor-Corporation | TQFP | 100 | 0°C | 70°C | 164 K |
| ispLSI1032E-125LT | In-system programmable high density PLD, 7.5ns | Lattice-Semiconductor-Corporation | TQFP | 100 | 0°C | 70°C | 164 K |
| ispLSI1032E-70LJI | In-system programmable high density PLD, 15ns | Lattice-Semiconductor-Corporation | PLCC | 84 | -40°C | 85°C | 164 K |
| ispLSI1032E-70LJI | In-system programmable high density PLD, 15ns | Lattice-Semiconductor-Corporation | PLCC | 84 | -40°C | 85°C | 164 K |
| ispLSI1032E-70LT | In-system programmable high density PLD, 15ns | Lattice-Semiconductor-Corporation | TQFP | 100 | 0°C | 70°C | 164 K |
| ispLSI1032E-70LTI | In-system programmable high density PLD, 15ns | Lattice-Semiconductor-Corporation | TQFP | 100 | -40°C | 85°C | 164 K |
| ispLSI1032E-80LJ | In-system programmable high density PLD, 12ns | Lattice-Semiconductor-Corporation | PLCC | 84 | 0°C | 70°C | 164 K |
| ispLSI1032E-90LJ | In-system programmable high density PLD, 10ns | Lattice-Semiconductor-Corporation | PLCC | 84 | 0°C | 70°C | 164 K |
| ispLSI1032E-90LT | In-system programmable high density PLD, 10ns | Lattice-Semiconductor-Corporation | TQFP | 100 | 0°C | 70°C | 164 K |
| ISPLSI3256A-90LM | In-system programmable high density PLD, 128 I/O pins, 11000 PLD gates, 384 registers, 90MHz | Lattice-Semiconductor-Corporation | MQFP | 160 | 0°C | 70°C | 163 K |
| << [22] [23] [24] [25] [26] 27 [28] [29] [30] [31] |
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