Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRFPS3810 | HEXFET power MOSFET. VDSS = 100 V, RDS(on) = 0.009 Ohm, ID = 170 A | International-Rectifier | - | 3 | -55°C | 175°C | 124 K |
IRFPS3815 | HEXFET power MOSFET. VDSS = 150 V, RDS(on) = 0.015 Ohm, ID = 105 A | International-Rectifier | - | 3 | -55°C | 175°C | 101 K |
MPS3390 | NPN silicon planar epitaxial transistor | distributor | - | 3 | - | - | 57 K |
MPS3391 | NPN silicon planar epitaxial transistor | distributor | - | 3 | - | - | 57 K |
MPS3392 | NPN silicon planar epitaxial transistor | distributor | - | 3 | - | - | 57 K |
MPS3393 | NPN silicon planar epitaxial transistor | distributor | - | 3 | - | - | 57 K |
MPS3394 | NPN silicon planar epitaxial transistor | distributor | - | 3 | - | - | 57 K |
MPS3395 | NPN silicon planar epitaxial transistor | distributor | - | 3 | - | - | 57 K |
MPS3396 | NPN silicon planar epitaxial transistor | distributor | - | 3 | - | - | 57 K |
MPS3397 | NPN silicon planar epitaxial transistor | distributor | - | 3 | - | - | 57 K |
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