| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PSMN004-25B | 25 V, N-channel logic level trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 101 K |
| PSMN040-200W | 200 V, N-channel trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 87 K |
| PSMN057-200B | 200 V, N-channel trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 98 K |
| PSMN057-200P | 200 V, N-channel trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 92 K |
| PSMN063-150D | 150 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 279 K |
| PSMN070-200B | 200 V, N-channel trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 149 K |
| PSMN070-200P | 200 V, N-channel trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 149 K |
| PSMN085-150K | 150 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 8 | -55°C | 150°C | 265 K |
| PSMN155-200K | 200 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 8 | -55°C | 150°C | 273 K |
| PSMN155-200K | 200 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 8 | -55°C | 150°C | 273 K |
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