Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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APT10086BVR | 1000V, 13A power MOS V transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 66 K |
APT10086SVR | 1000V, 13A power MOS V transistor | Advanced-Power-Technology-APT | D3PAK | 3 | -55°C | 150°C | 69 K |
APT10088HVR | 1000V, 11A power MOS V transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 65 K |
APT100GF60B2R | 600V, 100A fast IGBT | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 38 K |
APT100GF60JR | 600V, 100A fast IGBT | Advanced-Power-Technology-APT | ISOTOP | 3 | -55°C | 150°C | 62 K |
APT100GF60LR | 600V, 100A fast IGBT | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 38 K |
APT100S20B | 200V, 100A high voltage schottky diode | Advanced-Power-Technology-APT | - | 2 | -55°C | 150°C | 32 K |
APT100S20LCT | 200V, 100A high voltage schottky diode | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 36 K |
APT10M07JVR | 100V, 225A power MOS V transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 73 K |
APT10M09B2VFR | 100V, 100A power MOS V transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 41 K |
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