Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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HB52R1289E22-A6B | 128-Mword x 72-bit; 100MHz memory bus; 2-bank module; 1GB registered SDRAM DIMM | distributor | - | 168 | - | - | 168 K |
IXFR120N20 | 200V HiPerFET power MOSFET | distributor | ISOPLUS247 | 3 | -55°C | 150°C | 34 K |
IXFR12N100Q | 1000V HiPerFET power MOSFET | distributor | ISOPLUS247 | 3 | -55°C | 150°C | 33 K |
IXGR12N60C | 600V HiPerFAST IGBT | distributor | ISOPLUS247 | 3 | -55°C | 150°C | 55 K |
SR120 | Reverse voltage: 20.00V; 1.0A schottky barrier rectifier | distributor | - | 2 | -65°C | 150°C | 50 K |
SR120 | Reverse voltage: 20.00V; 1.0A schottky barrier rectifier | distributor | - | 2 | -65°C | 150°C | 50 K |
SR120-T3 | Reverse voltage: 20.00V; 1.0A schottky barrier rectifier | distributor | - | 2 | -65°C | 150°C | 50 K |
SR120-T3 | Reverse voltage: 20.00V; 1.0A schottky barrier rectifier | distributor | - | 2 | -65°C | 150°C | 50 K |
SR120-TB | Reverse voltage: 20.00V; 1.0A schottky barrier rectifier | distributor | - | 2 | -65°C | 150°C | 50 K |
SR120-TB | Reverse voltage: 20.00V; 1.0A schottky barrier rectifier | distributor | - | 2 | -65°C | 150°C | 50 K |
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