| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRFR214B | 250V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 647 K |
| IRLR210A | Power MOSFET | Fairchild-Semiconductor | - | - | - | - | 234 K |
| KSR2101 | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 55 K |
| KSR2103 | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 56 K |
| KSR2113 | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 46 K |
| PBYR2100CT | Schottky barrier double diode. Repetitive peak reverse voltage 100 V. | Philips-Semiconductors | SOT223 | 4 | 0°C | 85°C | 55 K |
| PBYR2150CT | Schottky barrier double diode. Repetitive peak reverse voltage 150 V. | Philips-Semiconductors | SOT223 | 4 | 0°C | 80°C | 70 K |
| R212 | Spectral responce: 185 to 650nm; 1250Vdc; anode current: 0.1mA; photomultiplier tube | distributor | - | 11 | -80°C | 50°C | 35 K |
| R2154-02 | Spectral responce: 300 to 650nm; 1600Vdc; anode current: 0.1mA; photomultiplier tube | distributor | - | 11 | -30°C | 50°C | 22 K |
| UNR2154 | PNP planer transistor, 30V, 0.1A | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | 3 | -55°C | 150°C | 48 K |
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