| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| DR210G | 1000 V, 2 A, glass passivated junction silicon rectifier | distributor | D2 | 2 | -65°C | 175°C | 39 K |
| DR210G | 1000 V, 6 A, Glass passivated junction rectifier | distributor | DO | 2 | -55°C | 150°C | 46 K |
| MBR2100 | 100 V, Schottky die | distributor | - | - | -65°C | 125°C | 10 M |
| SR2100 | Schottky barrier rectifier. Maximum recurrent peak reverse voltage 100 V. Maximum average forward rectified current 2.0 A. | distributor | - | 2 | -65°C | 150°C | 153 K |
| SR2100 | 100 V, 2 A schottky barrier rectifier | distributor | - | 2 | -65°C | 150°C | 33 K |
| TR2101SY11 | 1100 V, rectifier diode | distributor | - | 2 | - | - | 450 K |
| TR2101SY12 | 1200 V, rectifier diode | distributor | - | 2 | - | - | 450 K |
| TR2101SY13 | 1300 V, rectifier diode | distributor | - | 2 | - | - | 450 K |
| TR2101SY14 | 1400 V, rectifier diode | distributor | - | 2 | - | - | 450 K |
| TR2101SY15 | 1500 V, rectifier diode | distributor | - | 2 | - | - | 450 K |
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