Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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CR2103AA | TO-220 series Sibod, glass passivated junction, bi-directional. Pins 1-2&3-2, pins 1-3: Vr = 170.0V, Vbo = 250.0V,max. Ir = 5.0uA. Vt = 10.0V,typ. Ibo = 800.0mA. | distributor | - | 3 | -55°C | 175°C | 79 K |
CR2103AB | TO-220 series Sibod, glass passivated junction, bi-directional. Pins 1-2&3-2, pins 1-3: Vr = 170.0V, Vbo = 250.0V,max. Ir = 5.0uA. Vt = 10.0V,typ. Ibo = 800.0mA. | distributor | - | 3 | -55°C | 175°C | 79 K |
CR2103AC | TO-220 series Sibod, glass passivated junction, bi-directional. Pins 1-2&3-2, pins 1-3: Vr = 170.0V, Vbo = 250.0V,max. Ir = 5.0uA. Vt = 10.0V,typ. Ibo = 800.0mA. | distributor | - | 3 | -55°C | 175°C | 79 K |
HPR210 | 3.0 Watt miniature DC/DC converter. Nom.input voltage 12VDC, rated output voltage +-12VDC, rated output current +-30mA. | distributor | SIP | 20 | -25°C | 85°C | 56 K |
HPR210H | 3.0 Watt miniature DC/DC converter. Nom.input voltage 12VDC, rated output voltage +-12VDC, rated output current +-30mA. | distributor | SIP | 20 | -25°C | 85°C | 56 K |
IRFR210B | 200V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 655 K |
IRLR210A | Power MOSFET | Fairchild-Semiconductor | - | - | - | - | 234 K |
KSR2101 | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 55 K |
KSR2103 | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 56 K |
PBYR2100CT | Schottky barrier double diode. Repetitive peak reverse voltage 100 V. | Philips-Semiconductors | SOT223 | 4 | 0°C | 85°C | 55 K |
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