| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4R271669B-MCG6 | 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung-Electronic | microBGA(mirrored CS | 54 | 0°C | 100°C | 306 K |
| K4R271869B-MCG6 | 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung-Electronic | microBGA(mirrored CS | 54 | 0°C | 100°C | 306 K |
| K4R271869B-MCK7 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. | Samsung-Electronic | microBGA(mirrored CS | 54 | 0°C | 100°C | 306 K |
| K4R271869B-MCK8 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. | Samsung-Electronic | microBGA(mirrored CS | 54 | 0°C | 100°C | 306 K |
| K4R271869B-NCG6 | 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung-Electronic | microBGA(normal CSP) | 54 | 0°C | 100°C | 306 K |
| K4R271869B-NCK7 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. | Samsung-Electronic | microBGA(normal CSP) | 54 | 0°C | 100°C | 306 K |
| K4R271869B-NCK8 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. | Samsung-Electronic | microBGA(mirrored CS | 54 | 0°C | 100°C | 306 K |
| MAX6326UR27-T | Ultra-low-power microprocessor supervisory circuit (reset output active-low, push-pull). Reset threshold (typ) 2.700V. Order increment 10k | Maxim-Integrated-Producs | - | 3 | -40°C | 85°C | 131 K |
| MAX6326XR27-T | Ultra-low-power microprocessor supervisory circuit (reset output active-low, push-pull). Reset threshold (typ) 2.700V. Order increment 10k | Maxim-Integrated-Producs | - | 3 | -40°C | 85°C | 131 K |
| MAX6327XR27-T | Ultra-low-power microprocessor supervisory circuit (reset output active-high, push-pull). Reset threshold (typ) 2.700V. Order increment 10k | Maxim-Integrated-Producs | - | 3 | -40°C | 85°C | 131 K |
| [1] [2] [3] [4] [5] 6 [7] [8] |
|---|
