| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 300UR60A | Standard recovery diode | International-Rectifier | - | 2 | -65°C | 200°C | 210 K |
| 302UR60A | Standard recovery diode | International-Rectifier | - | 2 | -65°C | 200°C | 210 K |
| 72UFR60A | Standard recovery diode | International-Rectifier | - | 2 | -65°C | 200°C | 210 K |
| IR6210 | Intelligent high side mosfet power switch | International-Rectifier | - | 5 | - | - | 238 K |
| UNR6121 | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 81 K |
| UNR6122 | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 81 K |
| UNR6123 | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 81 K |
| UNR6124 | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 81 K |
| UNR612X | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 81 K |
| UNR612Y | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 81 K |
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